ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,411, issued on Nov. 3, was assigned to Volta Semiconductor Inc. (Cupertino, Calif.). "Semiconductor power device" was invented by Valerii Ne... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,412, issued on Nov. 3, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Semiconductor devices containing bi-metallic silicide ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,413, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices" was invented by Sunghwa... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,414, issued on Nov. 3, was assigned to ENKRIS SEMICONDUCTOR INC. (Suzhou, China). "HEMT devices and manufacturing methods thereof" was inven... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,415, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Method for forming epitaxial sour... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,416, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Image sensor gate structure and dopin... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,417, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Integrated circuit packages and metho... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,418, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device structure with i... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,419, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor Fin cutting process and... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,420, issued on Nov. 3, was assigned to CAMBRIDGE GAN DEVICES Ltd. (Cambridge, Great Britain). "Manufacturing methods for a power semiconduct... Read More